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| 2SC2585 NPN SILICON RF TRANSISTOR DESCRIPTION: The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz. PACKAGE STYLE MAXIMUM RATINGS IC VCEO VCBO VEB PT TJ TSTG JC O O 65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W O O O O DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE ft Ccb |S21E| | GNF MAG NF 2 TC = 25 C O TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V IC = 20 mA IC = 7.0 mA IC = 20 mA f = 1.0 GHz f = 1.0 MHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz MINIMUM TYPICAL MAXIMUM 100 100 50 115 8.5 0.2 18.0 11.0 6.5 11.0 15.0 10.0 2.0 2.5 0.6 250 UNITS A A --GHz pF dB dB dB dB 10.0 VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 7.0 mA IC = 10 mA IC = 7.0 mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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